The growth of III-V compound semiconductor materials and devices, including device design, processing, testing, and simulation. Specific materials of interest under current investigation are: (1) the "wide-bandgap" III-nitride alloys of InAlGaN; (2) the "long-wavelength" alloys of InAlGaAsP, and InGaAsSb; (3) the visible light-emitting materials containing InAlGaP alloys; and (4) nanostructures composed of III-V compound semiconductor materials. We also explore the interactions of the charge carriers (electrons and holes) in "zero-dimensional" quantum dots and the electronic states in "two-dimensional" quantum well nanostructures.

Developing advanced electronic materials and devices for future-generation commercial and defense applications.

We are developing "wide bandgap" III-V compound semiconductors and are working to improve materials quality and device performance. We have several worldwide device records at this time and seek to remain at the leading edge of this important new field. 

The excellence of the faculty, facilities, infrastructure, and administrative management at Georgia Institute of Technology and the opportunity to build a strong area of research at one of the best engineering universities in the world. The support of the Georgia Research Alliance has been a critically important element in my decision to come to Georgia Tech and in working to  Georgia Tech and the GRA expand their impact to improve the human condition. I have helped to  create the new Nanotechnology Research Center at Georgia Tech and to develop new interdisciplinary research opportunities in the nano-bio-electronics fields.